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SD823C..C Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 810/910 A
FEATURES
* High power FAST recovery diode series * 2.0 to 3.0 s recovery time * High voltage ratings up to 2500 V * High current capability * Optimized turn-on and turn-off characteristics
B-43
RoHS
COMPLIANT
* Low forward recovery * Fast and soft reverse recovery * Press PUK encapsulation * Hockey PUK version case style B-43 * Maximum junction temperature 150 C * Lead (Pb)-free * Designed and qualified for industrial level
810/910 A
PRODUCT SUMMARY
IF(AV)
TYPICAL APPLICATIONS
* Snubber diode for GTO * High voltage freewheeling diode * Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS SD823C..C S20 810 Ths 50 Hz 60 Hz Range 55 1500 9300 9730 1200 to 2500 2.0 TJ 25 - 40 to 150 S30 910 55 1690 9600 10 050 1200 to 2500 3.0 V s C A UNITS A C
IF(AV) IF(RMS) IFSM VRRM trr TJ
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 12 SD823C..C 16 20 25 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 1200 1600 2000 2500 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1300 1700 2100 2600 50 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA
Document Number: 93181 Revision: 14-May-08
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SD823C..C Series
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FORWARD CONDUCTION
PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied SD823C..C S20 810 (425) 55 (85) 1500 9300 9730 7820 Sinusoidal half wave, initial TJ = TJ maximum 8190 432 395 306 279 4320 1.00 1.11 0.80 0.76 2.20 S30 910 (470) 55 (85) 1690 9600 10 050 8070 8450 460 420 326 297 4600 0.95 1.06 0.60 m (I > x IF(AV)), TJ = TJ maximum Ipk = 1500 A, TJ = TJ maximum tp = 10 ms sinusoidal wave 0.57 1.85 V kA2s V kA2s A UNITS A C
Fast Recovery Diodes (Hockey PUK Version), 810/910 A
IF(AV) IF(RMS)
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
RECOVERY CHARACTERISTICS
MAXIMUM VALUE AT TJ = 25 C CODE trr AT 25 % IRRM (s) 2.0 3.0 TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 TYPICAL VALUES AT TJ = 125 C
IFM
dI/dt (A/s)
Vr (V)
trr AT 25 % IRRM (s) 3.5 5.0
Qrr (C) 240 380
Irr (A)
dir dt
trr t Qrr IRM(REC)
S20 S30
50
- 50
110 130
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, case junction to heatsink Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ, TStg RthJ-hs DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 150 0.076 0.038 9800 (1000) 83 B-43 UNITS C K/W N (kg) g
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Document Number: 93181 Revision: 14-May-08
SD823C..C Series
Fast Recovery Diodes (Hockey PUK Version), 810/910 A
RthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION CONDUCTION ANGLE SINGLE SIDE 180 120 90 60 30 0.007 0.008 0.010 0.015 0.026 DOUBLE SIDE 0.007 0.008 0.010 0.015 0.026 SINGLE SIDE 0.005 0.008 0.011 0.016 0.026 DOUBLE SIDE 0.005 0.008 0.011 0.016 0.026 TJ = TJ maximum K/W RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
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Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Maximum Allowable Heats T ink emperature (C)
160 140 120 100 80 60 40
Maximum Allowable Heatsink Temperature (C)
S D823C..S 20C S eries (S ingle S Cooled) ide R thJ-hs (DC) = 0.076 K/ W
160 140 120 100 80
S D823C..S 30C S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.076 K/ W
Conduction Angle
Conduction Angle
30 60 40 20 0 100 200 300
60
90
120 180
60 30
90
120 180 600 700
20 0 100 200 300 400 500 Average Forward Current (A)
400
500
600
700
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Ma ximum Allowable Heats T ink emperature (C)
160 140 120 100 80 60 40 30 20 0 200 400 600 60 90 120
Conduc tion Period
Maximum Allowable Heatsink T emperature (C)
160 140 120 100 80 60 30 40 20 0 0 200 400 600 800 1000 1200 Average Forward Current (A) 60 90 120 180 DC
Conduc tion Period
S D823C..S 20C S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.076 K/ W
S D823C..S 30C S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.076 K/ W
180
DC 800 1000
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Document Number: 93181 Revision: 14-May-08
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SD823C..C Series
Vishay High Power Products
Maximum Allowable Heatsink T emperature (C)
Fast Recovery Diodes (Hockey PUK Version), 810/910 A
Maximum Allowable Hea ts T ink emperature (C) 160 140 120 100
Conduc tion Period
160 140 120 100
S D823C..S 20C S eries (Double S ide Cooled) R thJ-hs (DC) = 0.038 K/ W
S D823C..S 30C S eries (Double S Cooled) ide RthJ-hs (DC) = 0.038 K/ W
Conduc tion Angle
80 60 40 20 30 0 0 200 400 600 800 1000 Average Forward Current (A) 90 120 60 180
80 60 40 20 DC 0 0 400 800 1200 1600 2000 Average Forward Current (A) 30 60 90 120 180
Fig. 5 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
Maximum Allowable Heatsink T emperature (C)
140 120 100
S D823C..S 20C S eries (Double S Cooled) ide RthJ-hs (DC) = 0.038 K/ W
Maximum Average Forward Power Los (W) s
160
3000 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 Average Forward Current (A) 180 120 90 60 30
Conduction Period
RMSLimit
80 60 40 20 30 0 0 250 500 750 1000 1250 1500 Average Forward Current (A) 60 90 120 DC 180
Conduction Angle
S D823C..S 20C S eries T = 150C J
Fig. 6 - Current Ratings Characteristics
Fig. 9 - Forward Power Loss Characteristics
Maximum Allowable Heats T ink emperature (C)
140 120 100
S D823C..S 30C S eries (Double S Cooled) ide RthJ-hs (DC) = 0.038 K/ W
Maximum Average Forward Power Loss (W)
160
3500 3000 2500 2000 1500
Conduc tion Period
Conduction Angle
DC 180 120 90 60 30
RMS Limit
80 60 40 20 30 0 0 200 400 600 800 1000 1200 Average Forward Current (A) 60 90 120 180
1000 500 0 0 200 400 600 800 1000 1200 14001600 Average Forward Current (A) S D823C..S 20C S eries T = 150C J
Fig. 7 - Current Ratings Characteristics
Fig. 10 - Forward Power Loss Characteristics
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Document Number: 93181 Revision: 14-May-08
SD823C..C Series
Fast Recovery Diodes (Hockey PUK Version), 810/910 A
Maximum Average Forw ard Power Loss(W)
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Peak Half Sine Wave Forward Current (A)
3000 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 Average Forward Current (A) 180 120 90 60 30
10000 9000 8000 7000 6000 5000 4000 3000
Maximum Non Repetitive S urge Current Versus Pulse T rain Dura tion. Initial T = 150C J No Voltage R eapplied Rated VRRM R eapplied
RMS Limit
Conduction Angle
S D823C..S 30C S eries T = 150C J
S D823C..S 20C S eries 0.1 Pulse T rain Duration (s) 1
2000 0.01
Fig. 11 - Forward Power Loss Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
Maximum Average Forward Power Loss (W)
Peak Half S Wave Forward Current (A) ine
3500 3000 2500 2000 1500 1000 500 0 0 400 800 1200 1600 2000 Average Forward Current (A)
Conduc tion Period
9000 8000 7000 6000 5000 4000
DC 180 120 90 60 30
At Any R ated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 150 C J @60 Hz 0.0083 s @50 Hz 0.0100 s
RMS Limit
S D823C..S 30C S eries T = 150C J
S D823C..S 30C S eries 3000 1 10 100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 12 - Forward Power Loss Characteristics
Fig. 15 - Maximum Non-Repetitive Surge Current
Peak Half S Wave Forward Current (A) ine
Peak Half S Wave Forward Current (A) ine
9000 8000 7000 6000 5000 4000 3000 2000 1
At Any R ated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 150 C J @60 Hz 0.0083 s @50 Hz 0.0100 s
10000 9000 8000 7000 6000 5000 4000 3000
Maximum Non Repetitive S urge Current Versus Pulse T rain Dura tion. Initial T = 150C J No Voltage Reapplied Rated VRRM Reapplied
S D823C..S 20C S eries 10 100
S D823C..S 30C S eries
2000 0.01
0.1 Pulse T rain Duration (s)
1
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 13 - Maximum Non-Repetitive Surge Current
Fig. 16 - Maximum Non-Repetitive Surge Current
Document Number: 93181 Revision: 14-May-08
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SD823C..C Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 810/910 A
10000 Instantaneous Forward Current (A) T = 25C J T = 150C J 1000
10000 Instantaneous F orward Current (A)
T = 25C J T = 150C J 1000
S D823C..S 20C S eries
S D823C..S 30C S eries
100 0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
100 0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 17 - Forward Voltage Drop Characteristics
Fig. 18 - Forward Voltage Drop Characteristics
T ransient T hermal Impedance ZthJ-hs (K/ W)
0.1
S D823C..S S 20/ 30C S eries
0.01
S teady S tate Value RthJ-hs = 0.076 K/ W (S ingle S ide Cooled) RthJ-hs = 0.038 K/ W (Double S ide Cooled ) (DC Operation)
0.001 0.001
0.01
0.1
1
10
100
S quare Wave Pulse Duration (s)
Fig. 19 - Thermal Impedance ZthJ-hs Characteristic
100
V
FP
100
I
T = 150C J
V
FP
I
T = 150C J
80 Forward Rec overy (V)
80 Forward Recovery (V)
60
60
40
T = 25C J
40
T = 25C J
20 S D823C..S 20C S eries 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us )
20 S D823C..S 30C S eries 0 0 400 800 1200 1600 2000 R ate Of Rise Of Forward Current - di/ dt (A/ us)
Fig. 20 - Typical Forward Recovery Characteristics
Fig. 21 - Typical Forward Recovery Characteristics
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Document Number: 93181 Revision: 14-May-08
SD823C..C Series
Fast Recovery Diodes (Hockey PUK Version), 810/910 A
Maximum R everse R overy T ec ime - T (s rr ) Maximum R everse R overy T ec ime - T (s) rr 6 5.5 5 4.5 4 3.5 3 2.5 2 10
IFM = 1000 A S Pulse ine 500 A 150 A
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7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 10 100 1000
IFM = 1000 A S Pulse ine 500 A 150 A
S D823C..S 20C S eries T = 150 C; Vr > 100V J
S D823C..S 30C S eries T = 150 C; Vr > 100V J
100
1000
Rate Of Fa ll Of Forward Current - di/ dt (A/ s)
Rate Of Fall Of Forward Current - d i/d t (A/ s)
Fig. 22 - Recovery Time Characteristics
Fig. 25 - Recovery Time Characteristics
Maximum R everse R overy Charg e - Qrr (C) ec
Maximum Reverse Recovery Charge - Qrr (C)
800
IFM = 1000 A
1200
IFM = 1000 A
700 600 500 400
S Pulse ine
1000 800
S Pulse ine
500 A
500 A
600
150 A
150 A
300 200 100 0 0 50 100 150 200 250 300 S D823C..S 20C S eries T = 150 C; Vr > 100V J
400 200 0 0 50 100 150 200 250 300 S D823C..S 30C S eries T = 150 C; Vr > 100V J
R ate Of Fall Of Forward Current - di/ dt (A/ s)
Rate Of Fall Of Forward Current - di/dt (A/ s)
Fig. 23 - Recovery Charge Characteristics
Fig. 26 - Recovery Charge Characteristics
Maximum Reverse R overy Current - Irr (A) ec
400 350 300 250 200 150 100 50 0 0
I FM = 1000 A S Pulse ine 500 A 150 A
Maximum Reverse Recovery Current - Irr (A)
450
550 500 450 400 350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 S D823C..S 30C S eries T = 150 C; Vr > 100V J
I FM = 1000 A S ine Pulse 500 A 150 A
S D823C..S 20C S eries T = 150 C; Vr > 100V J
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ s)
Rate Of Fall Of Forward Current - d i/ dt (A/ s)
Fig. 24 - Recovery Current Characteristics
Fig. 27 - Recovery Current Characteristics
Document Number: 93181 Revision: 14-May-08
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SD823C..C Series
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Fast Recovery Diodes (Hockey PUK Version), 810/910 A
1E4
10 joules p er pulse
1E4
Peak Forward Current (A)
4 2 1 0.6 0.4 0.2 0.1 0.08
Peak Forward Current (A)
6
2000
1000
600
400
200 100
50 Hz
1E3
1E3
3000 4000 6000 10000 15000 tp 20000
S D823C..S 20C S eries T rapezoidal Pulse T = 55C, VRRM = 800V C dv/ d t = 1000V/ us, di/ dt = 300A/ us
tp
S D823C..S 20C S eries S inusoidal Pulse T = 150C, VRRM = 800V J d v/ dt = 1000V/ s
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 31 - Frequency Characteristics
1E4
2000 3000 4000 6000 1000 400
1E4
Peak Forward Current (A)
100
50 Hz
Peak Forward Current (A)
200
S D823C..S 20C S eries T rapezoidal Pulse J T = 150C, VRRM = 800V d v/ d t = 1000V/ s d i/ d t = 100A/ s
tp 4 2 1 0.6 6 10 joules p er pulse
1E3
10000 15000 20000 tp
S D823C..S 20C S eries S inusoidal Pulse T = 55C, VRRM = 800V C d v/ d t = 1000V/ us
1E3
0.4
0.2
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 29 - Frequency Characteristics
Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
10 joules per pulse
1E4
Peak Forward Current (A)
6 4 2
Peak F orward Current (A)
1000 2000 3000
600 400 200 100 50 Hz
1E3
0.6 0.4
0.8
1
1E3
10000 15000 20000
4000 6000
tp
S D823C..S 20C S eries T rapezoidal Pulse T = 150C, VRRM = 800V J d v/ d t = 1000V/ s d i/ d t = 300A/ s
tp
S D823C..S 20C S eries T rapezoidal Pulse T = 55C, VRRM = 800V C d v/ dt = 1000V/ us, d i/ d t = 100A/ us
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 33 - Frequency Characteristics
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Document Number: 93181 Revision: 14-May-08
SD823C..C Series
Fast Recovery Diodes (Hockey PUK Version), 810/910 A
1E4
46 1 0.6 0.4 2 10 joules p er p ulse
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1E4
Peak Forward Current (A)
Peak F orward Current (A)
1000 1500 2000
600
400 200
100 50 Hz
1E3
0.2 0.1
S D823C..S 30C S eries S inusoid al Pulse T = 150C, VRRM = 800V J d v/ d t = 1000V/ s
1E3
3000 4000 6000 10000 15000 tp
S D823C..S 30C S eries T rapezoidal Pulse T = 55C, VRRM = 800V C d v/ d t = 1000V/ us, d i/ d t = 300A/ us
tp
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 37 - Frequency Characteristics
1E4
1000 400 200 100 50 Hz
1E4
Peak Forward Current (A)
Peak Forward Current (A)
2000
10 joules per pulse 6 4 2
3000 4000 6000
1E3
10000 15000 20000 tp
S D823C..S 30C S eries S inusoidal Pulse T = 55C, VRRM = 800V C d v/ d t = 1000V/ us
1E3
0.6 0.4
1
tp
1E2 1E1
1E2
1E3
1E4
1E2 1E1
S D823C..S 30C S eries T rapezoidal Pulse T = 150C, VRRM = 800V J d v/ d t = 1000V/ s d i/ d t = 100A/ s
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 35 - Frequency Characteristics
Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
10 joules p er pulse 6 4 2 1 0.8 0.6 0.4
S D823C..S 30C Series T rapezoida l Pulse T = 150C, VRRM = 800V J d v/ d t = 1000V/ s d i/ d t = 300A/ s
1E4
1000 400 200 100 50 Hz
Peak Forward Current (A)
Peak Forward Current (A)
2000
3000 4000 6000
1E3
1E3
10000 15000 20000 tp
S D823C..S 30C S eries S inusoidal Pulse T = 55C, VRRM = 800V C d v/ d t = 1000V/ us
tp
1E2 1E1
1E2
1E3
1E4
1E2 1E1
1E2
1E3
1E4
Pulse Basewidth (s )
Pulse Basewidth (s)
Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 39 - Frequency Characteristics
Document Number: 93181 Revision: 14-May-08
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SD823C..C Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Fast Recovery Diodes (Hockey PUK Version), 810/910 A
Device code
SD
1
1 2 3 4 5 6 7
82
2 Diode
3
3
C
4
25
5
S20
6
C
7
Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code C = PUK case B-43
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95249
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Document Number: 93181 Revision: 14-May-08
Legal Disclaimer Notice
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Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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